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Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform.

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    We developed the first monolithically integrated tunable laser on a silicon photonics platform using erbium-doped aluminum oxide. This compact, tunable laser offers a wide tuning range and stable output for advanced photonic applications.

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    Area of Science:

    • Photonics and Semiconductor Devices
    • Integrated Optics
    • Materials Science

    Background:

    • Tunable laser sources are essential for spectroscopy, WDM, LIDAR, and OCT.
    • Monolithic integration of tunable lasers on silicon photonics platforms is highly desirable for miniaturization and cost-effectiveness.

    Purpose of the Study:

    • To demonstrate the first monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform.
    • To achieve a wide tuning range and high side mode suppression ratio (SMSR) for practical applications.

    Main Methods:

    • Utilized erbium-doped Al2O3 as the gain medium on a silicon photonics platform.
    • Employed a Vernier cavity formed by two Si3N4 microring resonators for wide tunability.
    • Integrated a gain cavity phase shifter for fine wavelength tuning.

    Main Results:

    • Achieved a wide tuning range from 1527 nm to 1573 nm (46 nm) with >40 dB SMSR.
    • Obtained up to 1.6 mW output lasing power with 2.2% slope efficiency from 107 mW pump power.
    • Demonstrated fast signal response times (~200 μs and 35 μs) and a narrow linewidth of 340 kHz.

    Conclusions:

    • The developed integrated tunable laser meets key performance metrics for various photonic applications.
    • This work paves the way for advanced, compact, and cost-effective tunable laser solutions on silicon photonics.