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Updated: Feb 6, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Towards quantitative mapping of the charge distribution along a nanowire by in-line electron holography
Shikai Liu1, Te Shi2, Qiongyang Chen1
1Center of Electron Microscope, School of Material Science & Engineering, Zhejiang University, Hangzhou 310027, China.
Abstract:
Mapping the charge distribution in nano scale systems still is a difficult task, but is important to provide fundamental insights into the properties of materials. We demonstrate how in-line holography in transmission electron microscopy can be used to extract the charge distribution in the nanowire in a quantitative way. This technique can realize a fast acquisition of delicate charge variations. By taking advantage of the possibilities of in-situ electron microscopy, variations of the external field can be used to modulate the charge distribution. Because of the fast response to charge variations, this method provides an efficient probing tool for detecting dynamic charge redistribution.
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