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Related Experiment Video

Updated: Feb 6, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

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Compact epsilon-near-zero silicon photonic phase modulators.

Isak C Reines, Michael G Wood, Ting S Luk

|August 23, 2018

Summary

This study demonstrates a compact silicon photonic phase modulator using epsilon-near-zero transparent conducting oxide films. Cadmium oxide (CdO) TCOs enable practical phase modulation with a high figure of merit, paving the way for miniaturized photonic devices.

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Area of Science:

Photonics
Materials Science
Electrical Engineering

Background:

Silicon photonics offers miniaturization potential for optical devices.
Transparent conducting oxides (TCOs) are crucial for modulating light signals.
Epsilon-near-zero (ENZ) materials exhibit unique optical properties for device applications.

Purpose of the Study:

To analyze a compact silicon photonic phase modulator utilizing ENZ TCO films at 1.55 μm.
To compare the performance of indium oxide (In2O3) and cadmium oxide (CdO) TCOs in phase modulation.
To identify high-mobility ENZ materials for enhanced phase modulator performance.

Main Methods:

Fabrication of a non-resonant phase modulator using a CMOS-compatible process.
Deposition of thin TCO films (In2O3 and CdO) on a silicon waveguide.
Analysis of phase modulation performance based on field-effect carrier density modulation.

Main Results:

Practical phase modulation was achieved only with high-mobility ENZ materials like CdO.
The CdO-based phase modulator demonstrated a figure of merit of 17.1°/dB.
The device achieved modulation in a compact 5 μm length.

Conclusions:

High-mobility TCOs are essential for efficient silicon photonic phase modulation.
CdO TCOs provide a promising material for compact and high-performance phase modulators.
Further optimization with suitable TCOs can lead to device miniaturization and improved phase shifts.