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Evaluating the Electrochemical Properties of Supercapacitors using the Three-Electrode System

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Published on: January 7, 2022

Electrochemical metallization cell with anion supplying active electrode.

Ziyang Zhang¹, Yaoyuan Wang¹, Yan Luo²

¹Department of Precision Instrument, Center for Brain Inspired Computing Research, Tsinghua University, Tsinghua, China.

Scientific Reports

|August 24, 2018

Summary

This study introduces tellurium (Te) as a novel active electrode material for electrochemical metallization (ECM) memory devices. Unlike traditional materials, Te enables anion supply and exhibits unique switching behaviors, paving the way for advanced memory applications.

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Area of Science:

Materials Science
Solid-State Electronics
Nanotechnology

Background:

Electrochemical metallization (ECM) memory is an emerging non-volatile memory technology.
ECM cells typically use cation-supplying electrodes (e.g., Ag, Cu) for operation.
Novel active electrode materials for ECM are underexplored.

Purpose of the Study:

To investigate the use of tellurium (Te) as an active electrode in ECM memory cells.
To understand the electrochemical and resistive switching properties of Te-based ECM devices.
To explore the potential of Te in next-generation memory and neuromorphic computing.

Main Methods:

Fabrication of ECM cells with a Te active electrode.
Electrical characterization of device performance under varying conditions.
Analysis of switching mechanisms based on electrode material and electrolyte composition.

Main Results:

The Te electrode facilitates anion supply (Te^2-) via electrochemical reduction, reversing the typical cation supply mechanism.
Devices with Te electrodes show significant dependence on electrolyte material.
Repeatable unipolar and bipolar resistive switching were observed in Pt/GeS/Te and Pt/Ge₂Sb₂Te₅/Te cells, respectively.

Conclusions:

Tellurium is a viable and promising active electrode material for ECM memory.
The unique properties of Te, including reversed polarity and electrolyte sensitivity, offer new design possibilities.
Te-based ECM devices hold potential for advanced non-volatile memory and neuromorphic applications.