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Updated: Feb 6, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
A spin dephasing mechanism mediated by the interplay between the spin-orbit coupling and the asymmetrical confining
1Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China.
Abstract:
Understanding the spin dephasing mechanism is of fundamental importance in all potential applications of the spin qubit. Here we demonstrate a spin dephasing mechanism in a semiconductor quantum dot due to the 1/f charge noise. The spin-charge interaction is mediated by the interplay between the spin-orbit coupling and the asymmetrical quantum dot confining potential. The dephasing rate is proportional to both the strength of the spin-orbit coupling and the degree of the asymmetry of the confining potential. For parameters typical of the InSb, InAs, and GaAs quantum dots with a moderate well-height [Formula: see text] meV, we find the spin dephasing times are [Formula: see text] μs, 275 μs, and 55 ms, respectively. In particular, the spin dephasing can be enhanced by lowering the well-height. When the well-height is as small as [Formula: see text] meV, the spin depahsing times in the InSb, InAs, and GaAs quantum dots are decreased to [Formula: see text] μs, 18 μs, and 9 ms, respectively.
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