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Updated: Feb 6, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot
Leon C Camenzind1, Liuqi Yu1, Peter Stano2,3,4
1Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland.
Abstract:
Understanding and control of the spin relaxation time T1 is among the key challenges for spin-based qubits. A larger T1 is generally favored, setting the fundamental upper limit to the qubit coherence and spin readout fidelity. In GaAs quantum dots at low temperatures and high in-plane magnetic fields B, the spin relaxation relies on phonon emission and spin-orbit coupling. The characteristic dependence T1 ∝ B-5 and pronounced B-field anisotropy were already confirmed experimentally. However, it has also been predicted 15 years ago that at low enough fields, the spin-orbit interaction is replaced by the coupling to the nuclear spins, where the relaxation becomes isotropic, and the scaling changes to T1 ∝ B-3. Here, we establish these predictions experimentally, by measuring T1 over an unprecedented range of magnetic fields-made possible by lower temperature-and report a maximum T1 = 57 ± 15 s at the lowest fields, setting a record electron spin lifetime in a nanostructure.
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