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Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible

Zhi-Xue Xu1,2, Jian-Min Yan1, Meng Xu1

  • 1State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China.

ACS Applied Materials & Interfaces
|August 30, 2018
PubMed

Keywords:
electronic propertiesferroelectric field effect deviceferroelectric single crystalmagnetoresistancetin dioxide thin film

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