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Updated: Feb 5, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits
L Petit1, J M Boter1, H G J Eenink1
1QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, Netherlands.
Abstract:
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature, respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.
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