Progress and prospects of aberration-corrected STEM for functional materials
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Updated: Feb 5, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Haijun Wu1, Xiaoxu Zhao2, Dongsheng Song1
1Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore.
Abstract:
Aberration-corrected scanning transmission electron microscopy (STEM) provides real space imaging and spectroscopy at atomic resolution with a new level of sensitivity to structure, bonding, elemental valence and even dynamics. It has developed into the most powerful characterization and even fabrication platform for all materials, especially for functional materials with complex structural features that dynamically respond to external fields. Several representative examples of functional materials are shown, including piezoelectric and photoelectric materials, functional oxide interfaces, metal-organic framework (MOF)-derived transition metal oxide/phosphide catalysts and two-dimensional (2D) materials. In piezoelectric systems, atomic-resolution polarization mapping by Z-contrast imaging shows the intimate coexistence of two ferroelectric phases inside nanodomains. Quantitative STEM imaging and EELS spectroscopy reveal the underlying mechanism of the exotic coupling between polarization and charge at a functional oxide interface. Under the low-voltage STEM, defects in 2D materials are clearly visible, for example novel edges and single atom dopants. The dynamic behavior of single atoms in vacancies of monolayer MoS2 is shown to highlight the electron-beam induced nanofabrication ability of aberration-corrected STEM. Thanks to the rapid development of segmented/pixelated detectors, differential phase contrast and 4D STEM techniques are promising for the near future, providing more opportunities to understand the link between structure and functionality.
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