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Enhanced Electrical Properties of Atomic Layer Deposited LaxAlyO Thin Films with Stress Relieved Preoxide
Xing Wang1, Hongxia Liu2, Lu Zhao3
1Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China. xwangsme@xidian.edu.cn.
Abstract:
The impact of stress relieved preoxide (SRPO) interface engineering on the physical and electrical properties of LaxAlyO films was investigated. It was proved that the SRPO pretreatment has little influence on the surface morphology of LaxAlyO films and the chemical bond composition of LaxAlyO/Si interface. However, the SRPO pretreated MIS capacitor displayed obvious improvement in decreasing the amount of trapped oxide charges and interfacial traps. As a result, a reduction of more than one order of magnitude in the gate leakage current density was obtained. The breakdown field strength and TDDB reliability of the LaxAlyO film treated with SRPO were also enhanced.
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