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Updated: Feb 5, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
T Stettner1, A Thurn1, M Döblinger2
1Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany.
Researchers developed tunable semiconductor nanowire (NW) lasers using core-shell structures with multiple InGaAs quantum wells (QWs). These NW lasers emit light from the near-infrared to telecommunications wavelengths, crucial for optical communication and sensing applications.
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