Related Experiment Video
Updated: Feb 5, 2026
07:39
Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
Published on: July 21, 2018
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Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides
Ioannis E Fragkos1, Nelson Tansu2
1Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA, 18015, USA. iof213@lehigh.edu.
Scientific Reports
|September 8, 2018
Summary
Titanium nitride (TiN) shows promise as a plasmonic material to boost the internal quantum efficiency of gallium nitride doped with europium (GaN:Eu) red light emitters. This study evaluated several metal-nitrides for their potential in enhancing light emission.
Area of Science:
- Materials Science
- Optoelectronics
- Solid State Physics
Background:
- Gallium nitride doped with europium (GaN:Eu) is a key material for red light emission.
- Enhancing internal quantum efficiency (IQE) is crucial for improving light emitter performance.
Purpose of the Study:
- To investigate metal-nitrides as plasmonic materials for enhancing IQE in GaN:Eu red light emitters.
- To theoretically evaluate the suitability of hafnium nitride (HfN), zirconium nitride (ZrN), and titanium nitride (TiN).
Main Methods:
- Theoretical calculations of surface plasmon polariton dispersion relation.
- Evaluation of the Purcell enhancement factor for single metal-nitride layers on GaN:Eu.
- Comparative analysis of HfN, ZrN, and TiN as plasmonic materials.
Main Results:
- TiN demonstrated the most significant potential for enhancing IQE among the investigated metal-nitrides.
- Calculations provided insights into the plasmonic properties of HfN, ZrN, and TiN on GaN:Eu.
- The study identified TiN as a promising candidate for plasmonic enhancement.
Conclusions:
- Titanium nitride (TiN) is the most promising metal-nitride plasmonic material for improving GaN:Eu red light emitter efficiency.
- Further research into TiN-based plasmonic structures could lead to advanced optoelectronic devices.
- Metal-nitrides offer a viable route to enhance the performance of rare-earth-doped nitride emitters.
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