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Related Concept Videos

Electron Carriers01:24

Electron Carriers

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Electron carriers can be thought of as electron shuttles. These compounds can easily accept electrons (i.e., be reduced) or lose them (i.e., be oxidized). They play an essential role in energy production because cellular respiration is contingent on the flow of electrons.
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Carrier Transport01:21

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The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
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ADP/ATP carrier or AAC protein is the most abundant carrier protein in the inner mitochondrial membrane. It transports large quantities of ADP and ATP, equivalent to the average human body weight, every day. Among other transporters, ACC protein is one of the best-studied members of the mitochondrial carrier protein family. The ADP/ATP carrier protein comprises two transmembrane helices connected to a loop and a single alpha-helix on the matrix side. It switches between two conformational...
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Using a Cyclic Ion Mobility Spectrometer for Tandem Ion Mobility Experiments
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Large Carrier Mobilities in ErMnO

Patrick W Turner1, James P V McConville1, Shane J McCartan1

  • 1Centre for Nanostructured Media, School of Mathematics and Physics , Queen's University Belfast , University Road, Belfast , Northern Ireland , United Kingdom , BT71NN.

Nano Letters
|September 13, 2018
PubMed
Summary

Kelvin probe force microscopy revealed high room-temperature mobilities in ErMnO3 domain walls. These findings support domain-wall nanoelectronics and confinement effect studies.

Keywords:
Ferroelectric domain wallsHall microscopycarrier mobilitiesconduction

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • ErMnO3 exhibits unique domain wall properties.
  • Domain walls are potential candidates for novel electronic devices.

Purpose of the Study:

  • To quantitatively measure Hall voltages at ErMnO3 domain walls.
  • To determine carrier mobilities and densities in these domain walls.

Main Methods:

  • Utilized Kelvin probe force microscopy (KPFM) for measurements.
  • Employed two atomic force microscope platforms for cross-validation.
  • Drove current through domain walls under a magnetic field.

Main Results:

  • Observed unusually large p-type carrier mobilities (hundreds of cm²/Vs) at room temperature.
  • Estimated carrier densities of approximately 10¹³ cm⁻³.
  • Achieved consistent results across multiple domain walls and platforms.

Conclusions:

  • ErMnO3 domain walls possess exceptionally high carrier mobilities at room temperature.
  • These mobilities surpass those in bulk oxides and LaAlO3-SrTiO3 heterostructures.
  • The findings encourage the development of domain-wall nanoelectronics and confinement studies.