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Quantum State Engineering of Light with Continuous-wave Optical Parametric Oscillators
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Light Controlled Optical Aharonov-Bohm Oscillations in a Single Quantum Ring.

Heedae Kim1,2, Seongho Park3, Rin Okuyama4

  • 1School of Physics , Northeast Normal University , Changchun 130024 , China.

Nano Letters
|September 19, 2018
PubMed
Summary

Optical Aharonov-Bohm oscillations in quantum rings are controlled by excitation intensity. Higher intensity alters exciton behavior, suggesting light modifies carrier orbits and ring properties.

Keywords:
Aharonov−Bohm effectQuantum ringsexcitonslight excitationphotoluminescence

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Area of Science:

  • Quantum physics
  • Semiconductor nanostructures
  • Optoelectronics

Background:

  • Quantum rings exhibit unique electronic and optical properties.
  • Aharonov-Bohm oscillations are crucial for understanding quantum interference phenomena.
  • Wigner molecules represent strongly correlated electron states.

Purpose of the Study:

  • To investigate the influence of excitation intensity on optical Aharonov-Bohm oscillations in a single GaAs/GaAlAs quantum ring.
  • To explore the formation and stability of Wigner molecules under varying light intensities.
  • To understand how photoexcited carriers modify quantum ring characteristics.

Main Methods:

  • Fabrication of a single GaAs/GaAlAs quantum ring.
  • Optical spectroscopy to measure Aharonov-Bohm oscillations.
  • Varying excitation intensity (1.2 kW cm⁻² and 12 kW cm⁻²) to observe changes in optical properties.

Main Results:

  • At low intensity (1.2 kW cm⁻²), biexciton oscillations were half that of excitons, consistent with a two-exciton Wigner molecule.
  • At high intensity (12 kW cm⁻²), oscillation periods and diamagnetic coefficients decreased for both excitons and biexcitons.
  • A spectral shift was observed at higher excitation intensity, indicating changes in the quantum ring environment.

Conclusions:

  • Excitation intensity dynamically controls optical Aharonov-Bohm oscillations in quantum rings.
  • Photoexcited carriers, potentially trapped at interface defects, modify effective electron and hole orbit radii and rim widths.
  • Light intensity provides a mechanism to tune quantum correlations and electronic properties in semiconductor nanostructures.