Efficient ion-slicing of InP thin film for Si-based hetero-integration
Jiajie Lin1,2, Tiangui You1, Mao Wang3
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
Abstract:
Integration of high quality single crystalline InP thin film on Si substrate has potential applications in Si-based photonics and high-speed electronics. In this work, the exfoliation of a 634 nm crystalline InP layer from the bulk substrate was achieved by sequential implantation of He ions and H ions at room temperature. It was found that the sequence of He and H ion implantations has a decisive influence on the InP surface blistering and exfoliation, which only occur in the InP pre-implanted with He ions. The exfoliation efficiency first increases and then decreases as a function of H ion implantation fluence. A kinetics analysis of the thermally activated blistering process suggests that the sequential implantation of He and H ions can reduce the InP thin film splitting thermal budget dramatically. Finally, a high quality 2 inch InP-on-Si(100) hetero-integration wafer was fabricated by He and H ion sequential implantation at room temperature in combination with direct wafer bonding.
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