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Surfaces/Interfaces Modification for Vacancies Enhancing Lithium Storage Capability of Cu2O Ultrasmall Nanocrystals
Huawei Song1, Yue Gong2, Jian Su1
1State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering , Sun Yat-Sen (Zhongshan) University , Guangzhou 510275 , People's Republic of China.
Abstract:
Theoretically, Cu2O delivers a poor Li storage capacity ∼373.9 mA h g-1 based on a so-called conversion reaction (Cu2O + 2Li → 2Cu + Li2O). Herein, we broke through the bottleneck and acquired an impressive lithium storage capability (1122 mA h g-1) tripled more than the theoretical one by an in situ surface/interface engineering process for the first time. The surface/interface modification enabled us to fabricate ultrasmall nanocrystals of Cu2O with Cu vacancies (VCu) of high concentration, somewhat like monovalent anion doping. Except for the conversion reaction-type capacity, VCu enhancing intercalation pesudocapacitance in Cu2O and its reduction product-Cu also contributed a lot to the Li-storage capability. First-principles calculation substantiated that intercalation energy of Li was severely lowered for both Cu vacancy-rich Cu2O and Cu comparing with their stoichiometric counterparts. Another important factor for the enhancement was the surface/interface organic species themselves which could reversibly store Li by redox reactions. The surface/interface modification for vacancies, vacancy inheritance from metal oxide to single metal, and vacancy-enhancing Li-storage capability in metal oxide and single metal all will inspire us a lot in fabricating new-generation advanced electrodes for rechargeable batteries.
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