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Updated: Feb 5, 2026

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Published on: July 8, 2021
Disorder-Driven Transition from s_{±} to s_{++} Superconducting Order Parameter in Proton Irradiated
G Ghigo1,2, D Torsello1,2, G A Ummarino1,3
1Politecnico di Torino, Department of Applied Science and Technology, Torino 10129, Italy.
Abstract:
Microwave measurements of the London penetration depth and critical temperature T_{c} were used to show evidence of a disordered-driven transition from s_{±} to s_{++} order parameter symmetry in optimally doped Ba(Fe_{1-x}Rh_{x})_{2}As_{2} single crystals, where disorder was induced by means of 3.5 MeV proton irradiation. Signatures of such a transition, as theoretically predicted [V. D. Efremov et al., Phys. Rev. B 84, 180512(R) (2011)PRBMDO1098-012110.1103/PhysRevB.84.180512], are found as a drop in the low-temperature values of the London penetration depth and a virtually disorder-independent superconducting T_{c}. We show how these experimental observations can be described by multiband Eliashberg calculations in which the effect of disorder is accounted for in a suitable way. To this aim, an effective two-band approach is adopted, allowing us to treat disorder in a range between the Born approximation and the unitary limit.
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