Strain-Tunable Electronic Properties and Band Alignments in GaTe/C2N Heterostructure: a First-Principles Calculation

Xiao-Huan Li1, Bao-Ji Wang2, Xiao-Lin Cai1

  • 1School of Physics and Electronic Information Engineering, Henan Polytechnic University, 2001 Shiji Road, Jiaozuo, 454000, China.

Nanoscale Research Letters
|September 28, 2018
PubMed
Summary

The GaTe/C2N heterostructure is a promising semiconductor for optoelectronics. It exhibits enhanced light absorption and potential for photocatalytic water splitting, tunable with strain.

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