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Ag:SiO xN y-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for

Tae Ho Lee1, Dae Yun Kang1, Tae Geun Kim1

  • 1School of Electrical Engineering , Korea University , Seoul 02841 , Republic of Korea.

ACS Applied Materials & Interfaces
|September 28, 2018
PubMed
Summary

Researchers developed a new Pt/Ag:SiOₓNᵧ/Ti memory device. This device shows tunable threshold switching (TS) or resistive switching (RS) behavior after simple thermal annealing, enabling advanced memory applications.

Keywords:
conductive channelcrossbar arrayprogrammable metallization cellresistive switchingsneak currentthreshold switching

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Area of Science:

  • Materials Science
  • Solid-State Electronics
  • Nanotechnology

Background:

  • Programmable metallization cells (PMCs) are crucial for non-volatile memory.
  • Tuning switching characteristics in PMCs is essential for advanced functionalities.
  • Ag:SiOₓNᵧ materials offer potential for novel resistive switching behaviors.

Purpose of the Study:

  • To fabricate and characterize a Pt/Ag:SiOₓNᵧ/Ti PMC.
  • To investigate the tunability of threshold switching (TS) and resistive switching (RS) characteristics.
  • To demonstrate a one selector-one resistor (1S1R) device utilizing both switching modes.

Main Methods:

  • Fabrication of Pt/Ag:SiOₓNᵧ/Ti cells.
  • Thermal annealing process at 250 °C.
  • Material characterization using scanning transmission electron microscopy (STEM) and X-ray photoelectron spectroscopy (XPS).

Main Results:

  • Pristine Ag:SiOₓNᵧ layers exhibited self-limiting TS with high selectivity and low OFF currents.
  • Thermal annealing at 250 °C induced typical RS characteristics.
  • A 1S1R device integrated both TS and RS functionalities, showing excellent self-rectifying memory performance.

Conclusions:

  • Simple thermal annealing effectively tunes the switching behavior of Ag:SiOₓNᵧ based PMCs.
  • The developed 1S1R device leverages dual switching modes for improved memory performance.
  • This work presents a promising pathway for advanced non-volatile memory devices.