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Ligand Nano-cluster Arrays in a Supported Lipid Bilayer
Published on: April 23, 2017
Tae Ho Lee1, Dae Yun Kang1, Tae Geun Kim1
1School of Electrical Engineering , Korea University , Seoul 02841 , Republic of Korea.
Researchers developed a new Pt/Ag:SiOₓNᵧ/Ti memory device. This device shows tunable threshold switching (TS) or resistive switching (RS) behavior after simple thermal annealing, enabling advanced memory applications.
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