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Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
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Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron
Fernando E Camino1, Vitor R Manfrinato2, Aaron Stein2
1Center for Functional Nanomaterials, Brookhaven National Laboratory; fcamino@bnl.gov.
Journal of Visualized Experiments : Jove
|October 2, 2018
Summary
Researchers achieved single-digit nanometer patterning using an aberration-corrected electron microscope. This advanced electron-beam lithography method works with common resists like PMMA and HSQ for high-resolution feature creation.
Area of Science:
- Nanotechnology
- Materials Science
- Electron Microscopy
Background:
- Electron-beam lithography (EBL) is crucial for fabricating nanoscale devices.
- Achieving single-digit nanometer resolution with conventional resists and processes remains a challenge.
Purpose of the Study:
- To extend EBL capabilities to single-digit nanometer dimensions.
- To demonstrate high-resolution patterning using an aberration-corrected scanning transmission electron microscope (STEM).
- To evaluate patterning performance in poly (methyl methacrylate) (PMMA) and hydrogen silsesquioxane (HSQ).
Main Methods:
- Utilized an aberration-corrected STEM as the exposure tool for EBL.
- Employed conventional resists: poly (methyl methacrylate) (PMMA) and hydrogen silsesquioxane (HSQ).
- Applied standard pattern transfer techniques including metal lift-off, plasma etch, and resist infiltration.
Main Results:
- Achieved sub-5 nanometer feature sizes in PMMA.
- Obtained sub-10 nanometer resolution in HSQ.
- Demonstrated high-fidelity pattern transfer into various target materials.
Conclusions:
- Aberration-corrected STEM enables single-digit nanometer patterning with conventional EBL resists and processes.
- This method offers a viable route for fabricating ultra-high-resolution nanostructures.
- The demonstrated technique is compatible with established nanofabrication workflows.
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