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High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al₂O₃ Nanolaminate Structure

Rihui Yao1, Xiaoqing Li2, Zeke Zheng3,4

  • 1Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. yaorihui@scut.edu.cn.

Materials (Basel, Switzerland)
|October 3, 2018
PubMed

Keywords:
Nd:IZO/Al2O3 nanolaminate structureroom temperaturethin film transistor

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