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Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

D J J Loy1,2, P A Dananjaya1, X L Hong1

  • 1School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore.

Scientific Reports
|October 5, 2018
PubMed

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