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Nonvolatile Memory Based on Molecular Ferroelectric/Graphene Field Effect Transistor
Zainab Zafar1, Amina Zafar2, Wen-Hui Wang2
1Ordered Matter Science Research Center , Southeast University , Nanjing 211189 , P. R. China.
ACS Applied Materials & Interfaces
|October 9, 2018
Summary
Researchers developed multiaxial molecular ferroelectrics (MFe) thin films for advanced nonvolatile memory. These MFe films integrated with graphene show promising potential for next-generation flexible memory devices.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Ferroelectric thin films are key for nonvolatile memories.
- Molecular ferroelectrics (MFe) offer solution processability and tunable properties.
- Traditional MFe with uniaxial polarization limit applications due to orientation requirements.
Purpose of the Study:
- To explore multiaxial molecular ferroelectrics for enhanced memory applications.
- To overcome limitations of uniaxial ferroelectrics by developing multiaxial designs.
- To investigate the performance of multiaxial MFe in hybrid memory devices.
Main Methods:
- Fabrication of polycrystalline multiaxial MFe thin films of [Hdabco][ReO4].
- Integration of MFe films with two-dimensional graphene to create a hybrid memory device.
- Experimental characterization of polarization switching and memory characteristics.
Main Results:
- Demonstrated nonvolatile polarization switching in MFe via graphene current modulation.
- Achieved a large memory window of approximately 35 V in the MFe/graphene hybrid device.
- Showcased the potential of multiaxial MFe for memory applications.
Conclusions:
- Multiaxial MFe thin films offer advantages over uniaxial counterparts for memory devices.
- The MFe/graphene hybrid memory demonstrates significant potential for flexible, low-cost, large-area applications.
- This work opens new avenues for integrating MFe materials in next-generation electronic devices.
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