Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant [Formula: see text] with a relative uncertainty of 10^-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.