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Updated: Feb 4, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Signatures of van Hove Singularities Probed by the Supercurrent in a Graphene-hBN Superlattice
D I Indolese1, R Delagrange1, P Makk1,2
1Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
Abstract:
The band structure of graphene can be strongly modified if its lattice is aligned with the one of a boron nitride substrate. A moiré superlattice forms, which manifests itself by the appearance of new Dirac points, accompanied by van Hove singularities. In this work, we present supercurrent measurements in a Josephson junction made from such a graphene superlattice in the long and diffusive transport regime, where the critical current depends on the Thouless energy. We can then estimate the specific density of states of the graphene superlattice from the combined measurement of the critical current and the normal state resistance. The result matches with theoretical predictions and highlights the strong increase of the density of states at the van Hove singularities. By measuring the magnetic field dependence of the critical current, we find the presence of edge currents at these singularities. We explain it by the reduction of the Fermi velocity associated with the van Hove singularity, which suppresses the supercurrent in the bulk while the electrons at the edges remain less localized, resulting in an edge supercurrent. We attribute these different behaviors of the edges to defects or chemical doping.
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