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1,8-Substituted Pyrene Derivatives for High-Performance Organic Field-Effect Transistors
Xiaojie Gong1, Chaoyue Zheng1, Xingcui Feng1
1Jiangsu National Synergistic Innovation Centre for Advanced Materials (SICAM), Key Laboratory of Flexible Electronics (KLOFE) and, Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, P. R. China.
Chemistry, an Asian Journal
|October 20, 2018
Summary
Novel 1,8-substituted pyrene derivatives were synthesized for organic electronics. The thiophene-containing pyrene derivative demonstrated superior p-type semiconductor performance, achieving high hole mobility on polystyrene-treated surfaces.
Area of Science:
- Organic electronics
- Materials science
- Semiconductor physics
Background:
- Pyrene derivatives are widely explored as organic semiconductors.
- 1,8-substituted pyrene semiconductors remain underdeveloped.
- Development of novel p-type organic semiconductors is crucial for advanced electronic devices.
Purpose of the Study:
- To synthesize and characterize novel 1,8-substituted pyrene derivatives for organic semiconductor applications.
- To investigate the influence of structural modifications (thiophene vs. bithiophene arms) on semiconductor performance.
- To evaluate the impact of dielectric surface treatments on device performance.
Main Methods:
- Synthesis of two p-type 1,8-substituted pyrene derivatives with thiophene or bithiophene arms and octyl chains.
- Fabrication of organic field-effect transistors (OFETs) on SiO2 substrates with different surface treatments (polystyrene (PS) and octadecyltrichlorosilane (OTS)).
- Characterization of the field-effect performance, including hole mobility and leakage current.
Main Results:
- Both synthesized pyrene derivatives exhibited p-type semiconductor behavior.
- Device performance was significantly enhanced on PS-treated SiO2 compared to OTS-treated SiO2, attributed to larger grain formation and improved film quality.
- The thiophene-containing pyrene derivative achieved a maximum hole mobility of 0.18 cm^2 V^-1 s^-1, which was 45 times higher than the bithiophene-containing derivative.
- Superior performance of the thiophene derivative was linked to reduced steric hindrance, higher crystallinity, and larger grain size.
Conclusions:
- 1,8-substituted pyrene derivatives show promise as p-type organic semiconductors.
- Surface engineering of dielectric layers, specifically using polystyrene, can dramatically improve OFET performance.
- Structural design, particularly the choice of conjugated arms, plays a critical role in optimizing charge transport properties in pyrene-based semiconductors.
Keywords:
aggregationdielectric surfacesorganic field-effect transistorssemiconductorssulfur heterocyclesMore Related Videos
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