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Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation

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Published on: December 21, 2015

Higher-Order Topology in Bismuth.

Frank Schindler¹, Zhijun Wang², Maia G Vergniory^3,4,5

¹Department of Physics, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland.

|October 24, 2018

Summary

Bismuth, previously thought to be topologically trivial, is revealed as a higher-order topological insulator. Its hinges, not surfaces, host protected conducting modes, expanding the bulk-boundary correspondence concept.

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Area of Science:

Condensed Matter Physics
Materials Science
Quantum Chemistry

Background:

Topology provides a framework for describing electronic structures in crystalline solids.
Topological crystals typically exhibit conducting surface states, illustrating bulk-boundary correspondence.
Bismuth has been conventionally considered topologically trivial.

Purpose of the Study:

To establish bismuth as a topological material.
To demonstrate a generalized higher-order bulk-boundary correspondence in bismuth.
To identify and characterize the topologically protected conducting modes in bismuth.

Main Methods:

Theoretical analysis using symmetry arguments, topological indices, and first-principle calculations.
Application of the topological quantum chemistry framework.
Experimental validation using scanning-tunneling spectroscopy and Josephson interferometry.

Main Results:

Bismuth exhibits topological electronic structure following a higher-order bulk-boundary correspondence.
Conducting modes are localized at the hinges of the bismuth crystal, not the surfaces.
These hinge modes are protected by time-reversal, rotational, and inversion symmetries.

Conclusions:

Bismuth is established as a higher-order topological insulator.
The study expands the understanding of topological phenomena beyond conventional bulk-boundary correspondence.
Experimental evidence confirms the existence and properties of topological hinge states in bismuth.