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Updated: Feb 3, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Single-Crystal Electrochemistry Reveals Why Metal Nanowires Grow
Myung Jun Kim1, Samuel Alvarez1, Zihao Chen2
1Department of Chemistry , Duke University , 124 Science Drive , Box 90354, Durham , North Carolina 27708 , United States.
Abstract:
Shape-control is used to tune the properties of metal nanostructures in applications ranging from catalysts to touch screens, but the origins of anisotropic growth of metal nanocrystals in solution are unknown. We show single-crystal electrochemistry can test hypotheses for why nanostructures form and predict conditions for anisotropic growth by quantifying the degree to which different species cause facet-selective metal deposition. Electrochemical measurements show disruption of alkylamine monolayers by chloride ions causes facet-selective Cu deposition. An intermediate range of chloride concentrations maximizes facet-selective Cu deposition on single crystals and produces the highest aspect ratio nanowires in a solution-phase synthesis. DFT calculations similarly show an intermediate monolayer coverage of chloride displaces the alkylamine capping agent from the ends but not the sides of a nanowire, facilitating anisotropic growth.
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