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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
On the Power of Geometry over Tetrel Bonds
Ephrath Solel1, Sebastian Kozuch2
1Department of Chemistry, Ben-Gurion University of the Negev, Beer-Sheva 841051, Israel. ephrath@post.bgu.ac.il.
Abstract:
Tetrel bonds are noncovalent interactions formed by tetrel atoms (as σ-hole carriers) with a Lewis base. Here, we present a computational and molecular orbital study on the effect of the geometry of the substituents around the tetrel atom on the σ-hole and on the binding strengths. We show that changing the angles between substituents can dramatically increase bond strength. In addition, our findings suggest that the established Sn > Ge > Si order of binding strength can be changed in sufficiently distorted molecules due to the enhancement of the charge transfer component, making silicon the strongest tetrel donor.
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