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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

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Parylene-Based Double-Layer Gate Dielectrics for Organic Field-Effect Transistors.

Hyunjin Park, Hyungju Ahn¹, Jimin Kwon

¹Pohang Accelerator Laboratory , 77 Cheongam-Ro, Nam-Gu , Pohang 37673 , Republic of Korea.

ACS Applied Materials & Interfaces

|October 26, 2018

Summary

High-performance organic field-effect transistors (OFETs) were achieved using novel parylene-based double-layer gate dielectrics (DLGDs). This optimized dielectric structure enhances both performance and operational stability for practical electronic applications.

Keywords:

bias stress double-layer gate dielectrics organic field-effect transistors parylene stability

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Area of Science:

Materials Science
Organic Electronics
Semiconductor Physics

Background:

Organic field-effect transistors (OFETs) are crucial for flexible electronics.
Developing stable and high-performance gate dielectrics is essential for OFET advancement.
Parylene dielectrics offer promising properties but require optimization for OFET applications.

Purpose of the Study:

To develop and investigate novel parylene-based double-layer gate dielectrics (DLGDs) for high-performance OFETs.
To systematically study the structural effects of DLGDs on electrical and dielectric properties.
To achieve enhanced operational stability and performance in OFETs through optimized dielectric engineering.

Main Methods:

Fabrication of OFETs utilizing parylene C and parylene F based DLGDs.
Systematic variation of the thickness ratio between parylene C and parylene F layers.
Comprehensive evaluation of electrical characteristics (e.g., mobility, threshold voltage) and dielectric properties.
Analysis of structural effects on interface and bulk dielectric performance.

Main Results:

Demonstration of high-performance OFETs with optimized DLGDs.
Significant improvements in operational stability compared to single-layer dielectrics.
Identification of optimal thickness ratios for parylene C and parylene F layers.
DLGDs effectively combine the advantageous interface and bulk properties of individual parylene layers.

Conclusions:

Parylene-based DLGDs are highly effective for fabricating high-performance and stable OFETs.
The systematic investigation provides a valuable approach for optimizing dielectric structures in organic electronics.
This work paves the way for practical electronic applications utilizing advanced OFET technology.