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Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a

Hiroshi Tabata1, Yuta Sato1, Kouhei Oi1

  • 1Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering , Osaka University , 2-1 Yamadaoka , Suita , Osaka 565-0871 , Japan.

ACS Applied Materials & Interfaces
|October 27, 2018
PubMed

Keywords:
MoS2Schottky barriergas sensorgrapheneheterojunctionmetal−semiconductor−metal diodethermionic emission

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