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Updated: Feb 3, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
-symmetric interference transistor
Alexander A Gorbatsevich1,2, Gennadiy Ya Krasnikov2, Nikolay M Shubin1,2,3
1P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Division of solid state physics, Moscow, 119991 Russia.
Abstract:
We present a model of the molecular transistor, operation of which is based on the interplay between two physical mechanisms, peculiar to open quantum systems that act in concert: -symmetry breaking corresponding to coalescence of resonances at the exceptional point of the molecule, connected to the leads, and Fano-Feshbach antiresonance. This switching mechanism can be realised in particular in a special class of molecules with degenerate energy levels, e.g. diradicals, which possess mirror symmetry. At zero gate voltage infinitesimally small interaction of the molecule with the leads breaks the -symmetry of the system that, however, can be restored by application of the gate voltage preserving the mirror symmetry. -symmetry broken state at zero gate voltage with minimal transmission corresponds to the "off" state while the -symmetric state at non-zero gate voltage with maximum transmission - to the "on" state. At zero gate voltage energy of the antiresonance coincides with exceptional point. We construct a model of an all-electrical molecular switch based on such transistors acting as a conventional CMOS inverter and show that essentially lower power consumption and switching energy can be achieved, compared to the CMOS analogues.
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