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Updated: Feb 3, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Uncovering the Conduction Behavior of van der Waals Ambipolar Semiconductors

Feng Wang1,2, Bin Tu1, Peng He1,3

  • 1CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China.

Advanced Materials (Deerfield Beach, Fla.)
|October 30, 2018
PubMed

Keywords:
Schottky barrierambipolar conductivitymetal contactsvan der Waals heterostructuresvan der Waals semiconductors

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