High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions
Jean Choukroun1, Marco Pala1, Shiang Fang2
1Centre for Nanoscience and Nanotechnology, CNRS, Univ. Paris Sud, Université Paris Saclay, Orsay, France.
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In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We start by comparing several heterojunctions before focusing on the most promising ones, i.e. WTe2-MoS2 and MoTe2-MoS2. The scalability of those devices as a function of channel length is studied, and the influence of backgate voltages on device performance is analyzed. Our results indicate that, by fine-tuning the design parameters, those devices can yield extremely low subthreshold swings (<5 mV/decade) and I ON/I OFF ratios higher than 108 at a supply voltage of 0.3 V, making them ideal for ultra-low power consumption.
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