High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions

Jean Choukroun1, Marco Pala1, Shiang Fang2

  • 1Centre for Nanoscience and Nanotechnology, CNRS, Univ. Paris Sud, Université Paris Saclay, Orsay, France.

Nanotechnology
|November 2, 2018
PubMed
Abstract

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