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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Tian Tian1, Chander Shekhar Sharma2, Navanshu Ahuja1
1Institute for Chemical and Bioengineering, ETH Zürich, Vladimir-Prelog Weg 1, CH-8093, Zürich, Switzerland.
Researchers developed a novel force-sensing concept using interfacial field-effect transistors (IFETs). This technology enables highly sensitive mechanical stress detection by controlling semiconductor surface wettability.
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