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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Organic Single-Crystalline p-n Heterojunctions for High-Performance Ambipolar Field-Effect Transistors and Broadband
Xiaoming Zhao1, Tianjun Liu1, Hongli Liu2,3
1Materials Research Institute and School of Physics and Astronomy , Queen Mary University of London , Mile End Road , E1 4NS London , U.K.
Abstract:
Organic semiconducting single crystals are ideal building blocks for organic field-effect transistors (OFETs) and organic photodetectors (OPDs) because they can potentially exhibit the best charge transport and photoelectric properties in organic materials. Nevertheless, it is usual for single-crystal OFETs to be built from one kind of organic material in which the dominant transport is either electron or hole; such OFETs show unipolar charge transport. Furthermore, single-crystal OPDs present high performance only in restricted regions because of the limited absorption of one-component single crystals. In an ideal situation, devices which comprise both electron- and hole-transporting single crystals with complementary absorptions, such as single-crystalline p-n heterojunctions (SCHJs), can permit broadband photoresponse and ambipolar charge transport. In this paper, a solution-processing crystallization strategy to prepare an SCHJ composed of C60 and 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) was shown. These SCHJs demonstrated ambipolar charge-transport characteristics in OFETs with a balanced performance of 2.9 cm2 V-1 s-1 for electron mobility and 2.7 cm2 V-1 s-1 for hole mobility. This demonstration is the first of single-crystal OFETs in which both electron and hole mobilities were over 2.5 cm2 V-1 s-1. OPDs fabricated upon as-prepared SCHJs exhibited highly sensitive photoconductive properties ranging from ultraviolet to visible and further to near-infrared regions as a result of complementary absorption between C60 and TIPS-PEN, thereby attaining photoresponsivities that are among the highest reported values within the OPDs. This work would provide valuable references for developing novel SCHJ systems to achieve significant progress in high-performance ambipolar OFETs and broadband OPDs.
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