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Updated: Feb 2, 2026
16:05
Using Micro-Electro-Mechanical Systems MEMS to Develop Diagnostic Tools
Published on: October 1, 2007
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Stacked Integration of MEMS on LSI
Masayoshi Esashi1, Shuji Tanaka2
1Micro System Integration Center (μSIC), The World Premier International Research Center Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-0845, Japan. esashi@mems.mech.tohoku.ac.jp.
Micromachines
|November 9, 2018
Summary
Advanced integration methods for microelectromechanical systems (MEMS) on large-scale integration (LSI) were developed. These include wafer-level transfer and through-silicon vias, enabling novel microsystems like sensors and resonators.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Microelectromechanical systems (MEMS) require advanced integration techniques for complex microsystems.
- Large-scale integration (LSI) presents challenges for incorporating MEMS devices.
Purpose of the Study:
- To develop and present two novel stacked integration methods for MEMS on LSI.
- To demonstrate the applicability of these methods for various MEMS devices and applications.
Main Methods:
- Wafer-level transfer of MEMS from a carrier wafer to an LSI wafer.
- Electrical interconnections using through-silicon vias (TSVs) for MEMS on LSI.
- Categorization of wafer-level transfer into film transfer, device transfer with connectivity last, and immediate connectivity.
Main Results:
- Successful integration of film bulk acoustic resonators (FBAR) on LSI.
- Integration of lead zirconate titanate (Pb(Zr,Ti)O₃) (PZT) MEMS switches on LSI.
- Development of surface acoustic wave (SAW) resonators and selective transfer for multiple SAW filters on LSI.
- Fabrication of tactile sensors and active matrix electron emitters using through-Si vias.
Conclusions:
- The developed stacked integration methods enable advanced MEMS-LSI microsystems.
- Wafer-level transfer and through-Si vias are effective for diverse MEMS applications.
- These techniques pave the way for next-generation integrated microsystems.
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