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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
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Oxide-Oxide Thermocompression Direct Bonding Technologies with Capillary Self-Assembly for Multichip-to-Wafer
Takafumi Fukushima1,2, Hideto Hashiguchi3, Hiroshi Yonekura4,5
1Department of Mechanical Systems Engineering, Graduate School of Engineering, Tohoku University, 6-6-12 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, Japan. fukushima@lbc.mech.tohoku.ac.jp.
Micromachines
|November 9, 2018
Summary
Plasma and water-assisted direct bonding enables self-assembly for 3D integration. This multichip-to-wafer (MCtW) technology achieves high bonding yields and strengths for advanced microelectronic devices.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- 3D integration is crucial for advanced microelectronic devices.
- Self-assembly techniques offer precise alignment for complex structures.
- Oxide-oxide direct bonding is a key technology for interconnecting semiconductor layers.
Purpose of the Study:
- To demonstrate plasma- and water-assisted oxide-oxide thermocompression direct bonding for multichip-to-wafer (MCtW) 3D integration.
- To evaluate the bonding yields and strengths of self-assembled chips using this MCtW direct bonding technology.
- To investigate the mechanism of oxide-oxide direct bonding.
Main Methods:
- Utilized chemical mechanical polish (CMP)-treated oxide formed by plasma-enhanced chemical vapor deposition (PE-CVD) as the bonding interface.
- Employed N₂ or Ar plasmas for surface activation.
- Used water as a self-assembly mediate, leveraging liquid surface tension for chip alignment.
- Performed wafer-to-wafer thermocompression direct bonding for comparison.
- Analyzed the bonding mechanism using atmospheric pressure ionization mass spectrometry (APIMS).
Main Results:
- Successfully demonstrated plasma- and water-assisted oxide-oxide thermocompression direct bonding for MCtW 3D integration.
- Achieved precise alignment and tight bonding of self-assembled chips onto host wafers.
- Obtained high bonding yields and strengths, indicating the effectiveness of the MCtW direct bonding technology.
- Provided insights into the oxide-oxide direct bonding mechanism.
Conclusions:
- Plasma- and water-assisted direct bonding is a viable method for self-assembly in MCtW 3D integration.
- The developed technology enables high-performance bonding with excellent yields and strengths.
- The findings contribute to the advancement of 3D integration techniques for next-generation electronics.
Keywords:
3D integrationCMPcapillary self-assemblydirect bondingheterogeneous integrationliquid surface tensionmultichip-to-waferMore Related Videos
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