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A WSi⁻WSiN⁻Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems

Ha-Duong Ngo1,2, Biswajit Mukhopadhyay3, Piotr Mackowiak4

  • 1Center of Microperipheric Technologies, Fraunhofer Institute IZM, Berlin 13355, Germany. ha-duong.ngo@izm.fraunhofer.de.

Micromachines
|November 9, 2018
PubMed

Keywords:
SiC-based microsystemsmicroelectromechanical system (MEMS)sensors for harsh environmentsensors for high temperature

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