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Depth-dependent atomic valence determination by synchrotron techniques.

Robbyn Trappen1, Jinling Zhou1, Vu Thanh Tra2

  • 1Department of Physics and Astronomy, West Virginia University, Morgantown, WV 26506, USA.

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|November 9, 2018
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Summary
This summary is machine-generated.

This study introduces a new X-ray absorption spectroscopy (XAS) method to precisely measure atomic valence layer-by-layer in La0.7Sr0.3MnO3 (LSMO) thin films, revealing valence profiles with high accuracy.

Keywords:
Hamiltonian calculationsX-ray absorptionmanganitesthin filmsvalence

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Area of Science:

  • Materials Science
  • Surface Science
  • Spectroscopy

Background:

  • Atomic valence variations at material surfaces and interfaces significantly impact material properties and performance.
  • Understanding layer-dependent atomic valence is crucial for advanced material applications.
  • Existing methods may lack the precision or non-destructive nature required for detailed valence profiling.

Purpose of the Study:

  • To develop and present a non-destructive method for determining layer-by-layer atomic valence in thin films.
  • To apply this method to La0.7Sr0.3MnO3 (LSMO) thin films and extract the manganese (Mn) valence profile.
  • To demonstrate the potential of this approach for studying other material systems and properties.

Main Methods:

  • Utilized a combination of bulk-sensitive fluorescence yield and surface-sensitive total electron yield X-ray absorption spectroscopy (XAS) detection modes.
  • Simultaneously fitted the weighted-average Mn atomic valence from both modes using a theoretical model based on Hamiltonian calculations.
  • Modeled layer-by-layer valence variation to extract the depth-resolved valence profile.

Main Results:

  • Successfully extracted the Mn valence profile in LSMO thin films as a function of material thickness.
  • Determined the atomic valence within each layer to within an uncertainty of a few percent.
  • Validated a novel non-destructive technique for precise, layer-resolved valence analysis.

Conclusions:

  • The presented XAS-based method provides accurate, layer-by-layer determination of atomic valence in thin films.
  • This technique offers a powerful tool for probing material interfaces and understanding structure-property relationships.
  • The approach is adaptable for studying other material systems and properties, such as magnetism.