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Direct Patterning of p-Type-Doped Few-layer WSe₂ Nanoelectronic Devices by Oxidation Scanning Probe Lithography.

A I Dago¹, Y K Ryu¹, F J Palomares¹

¹Materials Science Factory , Instituto de Ciencia de Materiales de Madrid, CSIC , c/Sor Juana Ines de la Cruz 3 , 28049 Madrid , Spain.

ACS Applied Materials & Interfaces

|November 13, 2018

Summary

Researchers developed a new method to create tiny nanoribbons from tungsten diselenide (WSe₂) field-effect transistors using oxygen plasma and scanning probe lithography. This technique allows for precise patterning of 2D materials for advanced electronic devices.

Keywords:

few-layer tungsten diselenide nanodevices nanopatterning oxygen plasma p-type doping scanning probe lithography transition-metal dichalcogenides

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Area of Science:

Materials Science
Nanotechnology
Condensed Matter Physics

Background:

Advanced patterning techniques are crucial for downscaling 2D materials.
Observing new properties and optimizing processing requires precise material fabrication.

Purpose of the Study:

To develop a direct, robust, high-resolution patterning method for 2D materials.
To fabricate nanoribbon-based field-effect transistors from WSe₂.

Main Methods:

Oxygen plasma treatment of WSe₂ field-effect transistors to form a self-limited oxide layer.
Oxidation scanning probe lithography (o-SPL) for controlled nanoribbon fabrication.
Deionized water etching to remove oxide and yield nanoribbon transistors.

Main Results:

Fabricated a WSe₂ field-effect transistor with a channel of parallel nanoribbons (350 nm half-pitch).
Achieved sub-50 nm feature sizes, including oxide nanowires with 36 nm half-pitch.
Observed improved conduction and a positive threshold voltage shift due to p-doping.

Conclusions:

The developed o-SPL method enables direct writing and minimizes lithographic steps.
This technique facilitates the creation of high-resolution nanostructured 2D materials.
The process is effective for fabricating advanced nanoribbon-based field-effect transistors.