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Researchers demonstrate reversible magnetic switching at room temperature using proton (H+) pumping. This voltage-controlled method enables ultralow-power spintronic devices without degradation over thousands of cycles.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Electrical manipulation of magnetism is key for next-generation electronics.
  • Previous methods using oxygen ion displacement required high temperatures and caused degradation.

Purpose of the Study:

  • To develop a reversible, non-destructive method for electrical control of magnetic anisotropy at room temperature.
  • To explore proton (H+) pumping for voltage-controlled magnetism in solid-state heterostructures.

Main Methods:

  • Fabrication of all-solid-state Co/GdOx and Pd/Co/Pd heterostructures.
  • Utilizing gate voltage to drive H+ insertion and removal at interfaces.
  • Characterizing magnetic anisotropy changes and device cycling stability.

Main Results:

  • Achieved 90° magnetization switching via H+ insertion at a Co/GdOx interface.
  • Demonstrated reversible magnetic anisotropy control at room temperature.
  • Showcased over 2,000 cycles of non-destructive switching in Pd/Co/Pd heterostructures.

Conclusions:

  • Proton pumping offers a viable route for voltage-controlled magnetism at room temperature.
  • This approach enables ultralow-power spintronic memory, logic, and sensor applications.
  • The findings establish a platform for voltage-controlled spin-orbitronics.