An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its

Junfeng Li1, Shuman Mao2, Yuehang Xu3

  • 1School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China. lijunfeng_EE@163.com.

Micromachines
|November 15, 2018
PubMed

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