A silicon nitride waveguide-integrated chemical vapor deposited graphene photodetector with 38 GHz bandwidth
Yun Gao1, Hon Ki Tsang, Chester Shu
1Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China. ctshu@ee.cuhk.edu.hk.
Abstract:
We demonstrate a high-speed chemical vapor deposited graphene-on-silicon nitride waveguide photodetector. The device is designed with grating-like metal contact to reduce the channel spacing. Benefiting from the narrow channel spacing, a calculated transit-time-limited bandwidth of 111 GHz is derived. The resistance-capacitance-limited bandwidth is also improved due to the small relative permittivity of silicon nitride. At a wavelength of 1550 nm, we measured an electro-optic bandwidth of 38 GHz under zero bias and an intrinsic responsivity of 13 mA W-1 at 0.1 V reverse bias with a 6 μm detection length.
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