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    We demonstrate enhanced performance of Germanium-on-Silicon avalanche photodetectors (APDs) up to 50 Gb/s by leveraging internal RF-gain effects and negative differential resistance (NDR). This advancement improves signal quality and sensitivity in optical communication modules.

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    Area of Science:

    • Optoelectronics
    • Semiconductor Devices

    Background:

    • Germanium-on-Silicon (Ge-on-Si) avalanche photodetectors (APDs) are crucial for high-speed optical communications.
    • Understanding their operational voltage regions and gain characteristics is key to performance optimization.

    Purpose of the Study:

    • To present enhanced performance of vertical-illumination Ge-on-Si APDs.
    • To investigate the impact of internal RF-gain effects and negative differential resistance (NDR) on APD performance up to 50 Gb/s.

    Main Methods:

    • Fabrication of Ge-on-Si APDs.
    • Characterization of current-voltage (I-V) curves to identify operational regions, including NDR beyond avalanche breakdown.
    • Testing APD performance in a Receiver Optical Sub-Assembly (ROSA) module with a commercial transimpedance amplifier (TIA) at various data rates (30-40 Gb/s).

    Main Results:

    • Ge-on-Si APDs exhibit three operational voltage regions, with NDR observed at high bias.
    • Devices show good eye openings up to 50 Gb/s (non-return-to-zero signals) with improved signal-to-noise ratios and amplitudes.
    • ROSA modules achieved sensitivities of -18.9 dBm (30 Gb/s), -15.3 dBm (35 Gb/s), and -13.9 dBm (40 Gb/s) at a 10^-12 bit error rate.

    Conclusions:

    • Operating Ge-on-Si APDs in the NDR region offers significant performance enhancements.
    • Customized TIAs are recommended for further module performance improvements when utilizing APDs in the NDR region.