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Updated: Feb 2, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
Published on: August 8, 2025
Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
Joo Song Lee1,2, Soo Ho Choi3, Seok Joon Yun4
1Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Wanju-Gun, 55324, Republic of Korea.
Abstract:
Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide.
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