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11:13
Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
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Si and Ge based metallic core/shell nanowires for nano-electronic device applications
Prabal Dev Bhuyan1,2, Ashok Kumar3, Yogesh Sonvane4
1Computational Materials and Nanoscience Group, Department of Physics and Electronics, St. Xavier's College, Ahmedabad, 380009, India.
Scientific Reports
|November 17, 2018
Summary
New one-dimensional heterostructure nanowires with arsenic or antimony cores and germanium or silicon shells show tunable electronic properties. These semiconducting-to-metal transitions and negative differential conductance effects are promising for next-generation electronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- One-dimensional heterostructure nanowires (NWs) offer tunable energy gaps for advanced electronic devices.
- Core/shell NWs are crucial for manipulating electronic properties through strain engineering.
Purpose of the Study:
- To propose and investigate novel core/shell NW systems with tunable electronic properties.
- To explore the potential of these NWs in next-generation electronic and switching devices.
Main Methods:
- Computational modeling of germanium (Ge) and silicon (Si) shells around arsenic (As) and antimony (Sb) cores.
- Analysis of electronic properties, including energy gap tuning and current-voltage (I-V) characteristics.
- Investigating the impact of shell diameter on electrical resistivity and behavior.
Main Results:
- As/Ge and As/Si NWs exhibit a semiconducting-to-metal transition with increasing shell diameter.
- Negative differential conductance (NDC) observed in small-diameter NWs, indicating potential for fast switching.
- Ohmic behavior and a significant current increase (up to 300%) achieved by doubling shell dimensions.
- Resistivity decreases as nanowire diameter increases.
Conclusions:
- The proposed core/shell NWs demonstrate significant potential for tunable electronic properties.
- These NWs are suitable candidates for applications in atomic-scale devices and electron connectors in nanoelectronics.
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