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Characterization of Biological Absorption Spectra Spanning the Visible to the Short-Wave Infrared
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Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p- n

Dingkun Ren1, Xiao Meng2, Zixuan Rong1

  • 1Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States.

Nano Letters
|November 17, 2018
PubMed
Summary

We developed a new InAs nanowire photodetector for short-wavelength infrared (SWIR) imaging. This device shows excellent diode performance and low dark current, paving the way for advanced SWIR applications.

Keywords:
InAsInPNanowiresSWIRdark currentheterojunctionphotodetector

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Area of Science:

  • Semiconductor Nanowires
  • Optoelectronics
  • Infrared Photodetection

Background:

  • Indium Arsenide (InAs) nanowires are promising for short-wavelength infrared (SWIR) photodetection.
  • Achieving high performance in InAs nanowire photodetectors requires understanding and mitigating dark current.
  • Integration of nanostructured photoabsorbers on suitable substrates is crucial for device fabrication.

Purpose of the Study:

  • To demonstrate a novel InAs nanowire photodetector for SWIR applications.
  • To analyze the dark current mechanisms in selective-area InAs nanowire heterojunctions.
  • To investigate the potential for high-performance SWIR photodetectors using nanostructured materials.

Main Methods:

  • Fabrication of vertically oriented selective-area InAs nanowire arrays on InP substrates.
  • Measurement of rectification ratio, dark current density, and spectral response at room temperature.
  • Analysis of dark current using Arrhenius plots and three-dimensional electrical simulations.

Main Results:

  • Achieved a rectification ratio greater than 300 at room temperature, indicating good diode performance.
  • Measured a dark current density of 130 mA/cm² at 300 K and 0.5 V reverse bias, comparable to state-of-the-art bulk InAs photodiodes.
  • Identified Shockley-Read-Hall (SRH) nonradiative current, originating from surface traps, as the dominant dark current contributor.
  • Observed photodetection up to 2.5 μm wavelengths.

Conclusions:

  • The study elucidates dark current origins in small band gap selective-area nanowires.
  • The developed InAs-InP heterojunctions show potential for high-performance SWIR photodetectors.
  • This work enables integration of nanostructured photoabsorbers on large band gap substrates for improved SWIR imaging.