Effect of Post Thermal Annealing on the Optical Properties of InP/ZnS Quantum Dot Films
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Updated: Feb 2, 2026

Synthesis of Cd-free InP/ZnS Quantum Dots Suitable for Biomedical Applications
Published on: February 6, 2016
Bowen Zhang1, Zhipeng Wei2, Xinwei Wang3
1State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, China.
Abstract:
The enhancement of optical properties via thermal annealing on InP/ZnS core/shell quantum dot (QD) film was investigated in this work. The increase of emission intensities of the QD films was observed after thermal annealing at 180 °C for 5 min. Through temperature dependence photoluminescence (TDPL) and power dependence photoluminescence (PL) measurement, the peak located at the low-energy shoulder was confirmed to be localized state emission and the high energy one comes from free-carrier emission. Moreover, from the TDPL spectra of the sample annealed at 180 °C for 5 min, the full width at half maximum (FWHM) of localization state emission was nearly the same before which is 250 K and then decreased with increasing temperature. However, the FWHM was decreased significantly when temperature increased in the untreated sample. We conclude that the escape of localization states with increasing temperature contributes to this anomaly phenomenon. Our studies have significance on the application of QDs in electroluminescence devices and down-conversion light-emitting devices.
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