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Breakdown Voltage of a Floating Metal Ring Using Mo Metal
Tae Jin Nam1, Young Sung Hong1, Myoung Hwan Lee1
1Department of Research, Powercubesemi, Inc., Bucheon-si, Gyeonggi-do, Seockcheon-ro, 14449, Korea.
Journal of Nanoscience and Nanotechnology
|November 25, 2018
Summary
Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) with Floating Metal Rings (FMRs) show improved breakdown voltage. This novel edge termination enhances SiC device performance without ion implantation, overcoming previous limitations.
Area of Science:
- Materials Science and Engineering
- Semiconductor Device Physics
Background:
- Silicon Carbide (SiC) devices offer superior properties over silicon for high-performance applications.
- Existing SiC edge termination methods using ion implantation face challenges like grid damage and increased leakage current.
Purpose of the Study:
- To develop and evaluate a novel edge termination structure for SiC Schottky Barrier Diodes (SBDs) that avoids ion implantation.
- To compare the breakdown voltage of SiC SBDs with and without the Floating Metal Ring (FMR) structure.
Main Methods:
- Design of the SiC SBD Floating Metal Ring (FMR) edge-termination structure using simulation.
- Fabrication of SiC SBDs with and without the FMR structure.
- Experimental measurement and comparative analysis of the breakdown voltage for both configurations.
Main Results:
- The fabricated FMR SiC SBD demonstrated a breakdown voltage approximately 35% higher than the No-FMR configuration.
- The FMR structure effectively balanced the electric field, leading to enhanced breakdown voltage.
Conclusions:
- The Floating Metal Ring (FMR) edge termination is a viable and effective method for improving SiC SBD performance.
- This ion-implantation-free approach overcomes limitations of conventional edge termination techniques, paving the way for more robust SiC devices.
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